The performance of 4-inch VB method gallium oxide substrate of Fujia Gallium Industry has reached the international advanced level.

On February 20, Jinshi Data News, the reporter learned from Hangzhou Institute of Optoelectronics that Hangzhou Opto-Mechatronics Institute’s incubated enterprise Hangzhou Fujia Gallium Industry has made a major breakthrough in the field of vertical Bridgman (VB) method for growing gallium oxide crystals. The tested single crystal quality has reached the international advanced level, and now it is synchronously launching crystal growth equipment and process packages to the market. Test results show that the 4-inch VB crystal grown using Fujia Gallium equipment has no twinning inside, the single crystal substrate XRD full width at half maximum (FWHM) is better than 50arcsec, comparable to the quality of gallium oxide single crystal substrates prepared by the Czochralski method, and the performance has reached the international advanced level.